Wafers used for anodic bonding or as carriers in wafer thinning processes require thermal expansion behavior that matches the silicon wafer to be bonded. BOROFLOAT® wafers provide matched thermal expansion, flatness, process robustness, and high UV transmission.
We produce Schott® BOROFLOAT® 33 wafers to SEMI Standards including dimensional, flat, and notch specifications. We offer custom specifications including alignment marks, holes, pockets, edge profile, thickness, flatness, surface quality, and cleanliness.
Electrical Properties
| Property | Value |
|---|---|
| Dielectric Strength (25°C, 50Hz) | 16 kV/mm |
| Dielectric Constant (25°C, 1MHz) | 4.6 |
| Loss Tangent (25°C, 1MHz) | 37 x 10⁻⁴ |
| Electric Volume Resistivity (250°C) | 8.0 |
| Electric Volume Resistivity (350°C) | 6.5 |
Thermal Properties
| Property | Value |
|---|---|
| Thermal Coefficient of Expansion (20-300°C) | 3.25 x 10⁻⁶ K⁻¹ |
| Specific Thermal Capacity (20-100°C) | 0.83 KJ x (kg x K)⁻¹ |
| Specific Thermal Conductivity (90°C) | 1.2 W x (m x K)⁻¹ |
| Annealing Point | 560°C / 1040°F |
| Softening Point | 815°C / 1508°F |
| Thermal Conductivity @90°C | 1.2 W/mk |
Mechanical Properties
| Property | Value |
|---|---|
| Density (25°C / 77°F) | 2.23 g/cm³ |
| Modulus of Elasticity | 63 kN/mm² |
| Young's Modulus (25°C / 77°F) | 64 kN/mm² |
| Knoop Hardness HK | 0.1/20: 480 |
| Poisson's Ratio | 0.2 |
| Bending Strength | 25 MPa |
Maximum Operating Temperature (RTG and RTS)
| Condition | Value |
|---|---|
| Short Term | 500°C / 932°F |
| Long Term | 450°C / 842°F |
Optical Properties
| Property | Value |
|---|---|
| Refractive Index | 1.471 |
| Index of Refraction @435.8nm | 1.48 |
| Index of Refraction @589.3nm | 1.47 |
| Index of Refraction @656.3nm | 1.46 |
| Dispersion | 71.4 x 10⁻⁴ |
| Abbe Constant | 65.41 |